mpsa12 MPSA13 mpsa14 silicon npn darlington transistors description: the central semiconductor mpsa12 series devices are silicon npn darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. marking: full part number to-92 case maximum ratings: (t a =25c) symbol mpsa12 MPSA13 mpsa14 units collector-base voltage v cbo - 30 30 v collector-emitter voltage v ces 20 30 30 v emitter-base voltage v ebo 10 v continuous collector current i c 500 ma power dissipation p d 625 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ? ja 200 c/w electrical characteristics: (t a =25c) mpsa12 MPSA13 mpsa14 symbol test conditions min max min max min max units i cbo v cb =15v - 100 - - - - na i cbo v cb =30v - - - 100 - 100 na i ces v ce =15v - 100 - - - - na i ebo v eb =10v - 100 - 100 - 100 na bv ces i c =100a 20 - 30 - 30 - v v ce(sat) i c =10ma, i b =10a - 1.0 - - - - v v ce(sat) i c =100ma, i b =100a - - - 1.5 - 1.5 v v be(on) v ce =5.0v, i b =10ma - 1.4 - - - - v v be(on) v ce =5.0v, i b =100ma - - - 2.0 - 2.0 v h fe v ce =5.0v, i c =10ma 20k - 5k - 10k - h fe v ce =5.0v, i c =100ma - - 10k - 20k - f t v ce =5.0v, i c =10ma, f=100mhz - - 125 - 125 - mhz r1 (18-march 2014) www.centralsemi.com
mpsa12 MPSA13 mpsa14 silicon npn darlington transistors lead code: 1) emitter 2) base 3) collector marking: full part number to-92 case - mechanical outline www.centralsemi.com r1 (18-march 2014)
mpsa12 MPSA13 mpsa14 silicon npn darlington transistors typical electrical characteristics r1 (18-march 2014) www.centralsemi.com
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